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Merck
CN

647705

greener alternative

wafer, <111>, P-type, contains boron as dopant, diam. × thickness 2 in. × 0.3 mm

别名:

Silicon element

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关于此项目

线性分子式:
Si
化学文摘社编号:
分子量:
28.09
NACRES:
NA.23
PubChem Substance ID:
UNSPSC Code:
12352300
MDL number:
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Quality Level

form

crystalline (cubic (a = 5.4037)), wafer

contains

boron as dopant

greener alternative product characteristics

Design for Energy Efficiency
Learn more about the Principles of Green Chemistry.

sustainability

Greener Alternative Product

diam. × thickness

2 in. × 0.3 mm

bp

2355 °C (lit.)

mp

1410 °C (lit.)

density

2.33 g/mL at 25 °C (lit.)

greener alternative category

semiconductor properties

<111>, P-type

SMILES string

[Si]

InChI

1S/Si

InChI key

XUIMIQQOPSSXEZ-UHFFFAOYSA-N

General description

氧含量:≤ 1~1.8×1018/cm3;碳含量:≤ 5×1016/cm3;晶棒直径:1~8″
零涡旋缺陷。蚀坑密度 (EPD) < 100 (cm-2)。电阻率 10-3 - 40Ωcm
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ppe

Eyeshields, Gloves, type N95 (US)

存储类别

11 - Combustible Solids

wgk

nwg

法规信息

危险化学品

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分析证书(COA)

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实验方案

Photoresist kit offers pre-weighed chemical components for lithographic processes, with separate etchants for various substrate choices.

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Synthesis of Melting Gels Using Mono-Substituted and Di-Substituted Alkoxysiloxanes


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Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top-down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on
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Journal of nanoscience and nanotechnology, 13(5), 3511-3514 (2013-07-19)
We have characterized the structural properties of the ternary In(x)Ga(1-x)As nanowires (NWs) grown on silicon (Si) substrates using metalorganic chemical vapor deposition (MOCVD). Au catalyzed vapor-liquid-solid (VLS) mode was used for the NW growth. The density of the In(x)Ga(1-x)As NW
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全球贸易项目编号

货号GTIN
647705-1EA04061832731094